AP2M1 Supports TGF-β Signals to Promote Collagen Expression by Inhibiting Caveolin Expression

The extracellular matrix (ECM) is important for normal development and disease states, including inflammation and fibrosis. To understand the complex regulation of ECM, we performed a suppressor screening using Caenorhabditis elegans expressing the mutant ROL-6 collagen protein. One cuticle mutant has a mutation in dpy-23 that encodes the μ2 adaptin (AP2M1) of clathrin-associated protein complex II (AP-2). The subsequent suppressor screening for dpy-23 revealed the lon-2 mutation. LON-2 functions to regulate body size through negative regulation of the tumor growth factor-beta (TGF-β) signaling pathway responsible for ECM production. RNA-seq analysis showed a dominant change in the expression of collagen genes and cuticle components. We noted an increase in the cav-1 gene encoding caveolin-1, which functions in clathrin-independent endocytosis. By knockdown of cav-1, the reduced TGF-β signal was significantly restored in the dpy-23 mutant. In conclusion, the dpy-23 mutation upregulated cav-1 expression in the hypodermis, and increased CAV-1 resulted in a decrease of TβRI. Finally, the reduction of collagen expression including rol-6 by the reduced TGF-β signal influenced the cuticle formation of the dpy-23 mutant. These findings could help us to understand the complex process of ECM regulation in organism development and disease conditions.     

Electrical and magnetic properties of double perovskite: Y2CoMnO6

In this communication, the structural, micro-structural, dielectric, electrical, magnetic, and leakage-current characteristics of a double perovskite (Y₂CoMnO₆) ceramic material have been reported. The material was synthesized via a high-temperature mixed-oxide route. The compound crystallizes in a monoclinic structure which is confirmed from preliminary X-ray structural study. The morphological study by using scanning electron micrograph reveals the almost homogeneous distribution of grains throughout the surface of the sample. The nature of frequency-dependence of dielectric constant has been described by the Maxwell-Wagner model. The occurrence of a dielectric anomaly in the temperature dependence of dielectric permittivity study demonstrates the ferroelectric-paraelectric phase transition in the material. From the Nyquist plots, we found the existence of both grain and grain boundary effects. The frequency dependence of conductivity was studied by the Jonscher’s Power law, and the conduction phenomenon obeys the large overlapping polaron tunneling model. By using the Arrhenius equation, the activation energy has been calculated which is nearly equal to the energy required for the hoping of the electron. Both impedance and conductivity analysis demonstrate that the sample exhibits negative temperature coefficient of resistance (NTCR) properties indicating the semiconducting type of material at high temperatures. The anti-ferromagnetic character of the material is observed from the nature of magnetic hysteresis loop. The leakage current analysis suggests that the conduction process in the material follows the space charge limited conduction phenomenon. Such material will be helpful for modern electronic devices and spintronic applications.     

Compressive thermal stress and microstructure-driven charge carrier transport in silicon oxycarbide thin films

This work correlates the charge carrier transport mechanism of silicon oxycarbide-based thin films with their morphology and thermal stress. Segregation of highly-graphitized carbon-rich, oxygen-depleted C/SiC areas homogeneously dispersed within an oxygen-rich C/SiOC matrix was seen on the 500 nm-SiOC thin films. Compressive biaxial stress induced by the mismatch with the Si-substrate thermal expansion coefficient was calculated at 109 MPa. Through Hall measurements, p-type carriers were shown dominating the SiOC film similar to monolithic samples. Thin films and monoliths have comparable carrier concentrations while the carrier mobility in SiOC thin films was 2 magnitudes higher than that of monolithic samples and is considered a consequence of the compressive thermal stress acting on the film. Improved conductivity of 16 S cm -1 is measured for the SiOC thin film sample which is assumed considering the enhanced carrier mobility alongside the reduced percolation threshold ascribed to the phase-separated morphology of the thin film.     

激光在线测厚振动分析与精度优化

激光测厚具有安全可靠、测量精度高、测量范围大等优点,广泛应用于纸张、电池极片等薄膜类材料厚度的在线测量。带材宽幅方向扫描测厚时由于扫描架往复运动会产生机械振动,影响在线测厚精度。针对该问题,以锂离子电池极片厚度测量为例,使用双激光差动式测厚平台对电池极片和铜箔分别进行厚度测量,然后对测厚数据进行频谱分析,探究其振动规律的相似性,并基于频谱分析结果采用滑动带阻滤波方式对测厚数据进行处理,滤波后极片和铜箔的厚度极差分别降低了33.4%和73.8%,有效过滤了机械振动导致的测量误差,可满足极片和铜箔厚度测量的精度要求。     

Lactones in the Synthesis of Prostaglandins and Prostaglandin Analogs

In the total stereo-controlled synthesis of natural prostaglandins (PGs) and their structural analogs, a vast class of compounds and drugs, known as the lactones, are encountered in a few key steps to build the final molecule, as: δ-lactones, γ-lactones, and 1,9-, 1,11-, and 1,15-macrolactones. After the synthesis of 1,9-PGF_2α and 1,15-PGF_2α lactones, many 1,15-lactones of E₂, E₃, F₂, F₃, A₂, and A₃ were found in the marine mollusc Tethys fimbria and the quest for understanding their biological role stimulated the research on their synthesis. Then 1,9-, 1,11-, and 1,15-PG lactones of the drugs were synthesized as an alternative to the corresponding esters, and the first part of the paper describes the methods used for their synthesis. The efficient Corey procedure for the synthesis of prostaglandins uses the key δ-lactone and γ-lactone intermediates with three or four stereocenters on the cyclopentane fragment to link the PG side chains. The paper describes the most used procedures for the synthesis of the milestone δ-Corey-lactones and γ-Corey-lactones, their improvements, and some new promising methods, such as interesting, new stereo-controlled and catalyzed enantioselective reactions, and methods based on the chemical/enzymatic resolution of the compounds in different steps of the sequences. The many uses of δ-lactones not only for the synthesis of γ-lactones, but also for obtaining 9β-halogen-PGs and halogen-substituted cyclopentane intermediates, as synthons for new 9β-PG analogs and future applications, are also discussed.     

Heteroalleles in Common Wheat: Multiple Differences between Allelic Variants of the Gli-B1 Locus

The Gli-B1-encoded γ-gliadins and non-coding γ-gliadin DNA sequences for 15 different alleles of common wheat have been compared using seven tests: electrophoretic mobility (EM) and molecular weight (MW) of the encoded major γ-gliadin, restriction fragment length polymorphism patterns (RFLPs) (three different markers), Gli-B1-γ-gliadin-pseudogene known SNP markers (Single nucleotide polymorphisms) and sequencing the pseudogene GAG56B. It was discovered that encoded γ-gliadins, with contrasting EM, had similar MWs. However, seven allelic variants (designated from I to VII) differed among them in the other six tests: I (alleles Gli-B1i, k, m, o), II (Gli-B1n, q, s), III (Gli-B1b), IV (Gli-B1e, f, g), V (Gli-B1h), VI (Gli-B1d) and VII (Gli-B1a). Allele Gli-B1c (variant VIII) was identical to the alleles from group IV in four of the tests. Some tests might show a fine difference between alleles belonging to the same variant. Our results attest in favor of the independent origin of at least seven variants at the Gli-B1 locus that might originate from deeply diverged genotypes of the donor(s) of the B genome in hexaploid wheat and therefore might be called “heteroallelic”. The donor’s particularities at the Gli-B1 locus might be conserved since that time and decisively contribute to the current high genetic diversity of common wheat.     

Intrinsic Defect Limit to the Growth of Orthorhombic HfO2 and (Hf,Zr)O2 with Strong Ferroelectricity: First-Principles Insights

It is believed that promoting the fraction of ferroelectric orthorhombic phase (o-phase) through O-poor growth conditions can increase the spontaneous polarization of HfO₂ and (Hf,Zr)O₂ thin films. However, the first-principles calculations show that the growth may be limited by the easy formation of point defects in the orthorhombic and tetragonal phases of HfO₂, ZrO₂, and (Hf,Zr)O₂. Their dominant defects, O interstitial (O_i) under O-rich conditions and O vacancy (V_O) under O-poor condition, have low formation energies and quite high density (10¹⁶–10¹⁹ cm⁻³ for 800–1400 K growth temperature). Especially, O_i has negative formation energy in tetragonal HfO₂ under O-rich condition, causing non-stoichiometry and limiting the crystalline-seed formation during o-phase growth. High-density defects can cause disordering of dipole moments and increase leakage current, both diminishing the polarization. These results explain the experimental puzzle that the measured polarization is much lower than the ideal value even in O-poor thin films and highlight that controlling defects is as important as promoting the o-phase fraction for enhancing ferroelectricity. The O-intermediate condition (average of O-rich and O-poor conditions) and low growth temperature are proposed for fabricating HfO₂ and (Hf,Zr)O₂ with fewer defects, lower leakage current, and stronger ferroelectricity, which challenges the belief that O-poor condition is optimal.     

Colossal dielectric response and relaxation behavior in novel system of Zr4+ and Nb5+ co-substituted CaCu3Ti4O12 ceramics

In this work, we developed a novel system of isovalent Zr⁴⁺ and donor Nb⁵⁺ co-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics to enhance dielectric response. The influences of Zr⁴⁺ and Nb⁵⁺ co-substituting on the colossal dielectric response and relaxation behavior of the CCTO ceramics fabricated by a conventional solid-phase synthesis method were investigated methodically. Co-doping of Zr⁴⁺ and Nb⁵⁺ ions leads to a significant reduction in grain size for the CCTO ceramics sintered at 1060 °C for 10 h. XRD and Raman results of the CaCu₃Ti_3.8-xZr_xNb_0.2O₁₂ (CCTZNO) ceramics show a cubic perovskite structure with space group Im-3. The first principle calculation result exhibits a better thermodynamic stability of the CCTO structure co-doped with Zr⁴⁺ and Nb⁵⁺ ions than that of single-doped with Zr⁴⁺ or Nb⁵⁺ ion. Interestingly, the CCTZNO ceramics exhibit greatly improved dielectric constant (~10⁵) at a frequency range of 10²–10⁵ Hz and at a temperature range of 20–210 °C, indicating a giant dielectric response within broader frequency and temperature ranges. The dielectric properties of CCTZNO ceramics were analyzed from the viewpoints of defect-dipole effect and internal barrier layer capacitance (IBLC) model. Accordingly, the immensely enhanced dielectric response is primarily ascribed to the complex defect dipoles associated with oxygen vacancies by co-doping Zr⁴⁺ and Nb⁵⁺ ions into CCTO structure. In addition, the obvious dielectric relaxation behavior has been found in CCTZNO ceramics, and the relaxation process in middle frequency regions is attributed to the grain boundary response confirmed by complex impedance spectroscopy and electric modulus.     

Dielectric properties of alumino-silicate ceramics synthesized by plasma sintering

The polycrystalline ceramic specimens of three different alumino-silicate solid solutions (Al_0.70Si_0.30O, Al_0.73Si_0.27O and Al_0.75Si_0.25O) consisting of different alumina and silica concentrations have been synthesized by thermal plasma sintering technique. From structural analysis carried out by X-ray diffraction, the ceramics are mostly found to consist of two different phases of mullite and sillimanite. SEM images of these ceramics reveal a high dense and less porous microstructure with homogeneous distribution of grains throughout their surface. These materials exhibit high dielectric constant value (>10³) with low dissipation factor. The AC conductivity analysis reveals that Al_0.70Si_0.30O and Al_0.75Si_0.25O ceramics possess room temperature conductivity values of the order of 10^?5, whereas Al_0.73Si_0.27O has conductivity of 10^?7 order that increases with rise in temperature. From the Nyquist plots, the grain and grain boundary conductivities are distinguished and negative temperature coefficient of resistance behavior is identified in these ceramics with small positive temperature coefficient of resistance effect.